ChangZhou Duane IMP & EXP CO., LTD

We offer 1600V/1800V/2200V Thyristor Discrete , the package is TO-247/TO-220/SOT-227.Our mainly material is fr

Our Thyristor Discrete is TO-247/SOT-227 package , The voltage is from 1600V to 2200V, Current is from 25A to

Our 1600V Thyristor Discrete has 25A/60A/75A/130A, Package is TO-220/TO-247/SOT-227.A silicon-controlled recti

Our Schottky Diode Products has two series, 1200V Silicon Carbide Schottky Diode and 200V Rectifier Schottky D

2 A, 1200 V Z-Recâ„¢ Silicon Carbide Schottky Diode, TO-220 package Cree is the worldâ€â

ChangZhou Duane IMP & EXP CO., LTD manufcture Silicon Carbide Schottky Diode, Ultra Fast Recovery Diode, T

we produce 1200V Silicon Carbide Schottky Diode , the current is 2A/5A/8A/10A/15A/20A/50A, VRRM is 1200v , The

ChangZhou Duane IMP & EXP CO., LTD manufcture Silicon Carbide Schottky Diode, Ultra Fast Recovery Diode, T

ChangZhou Duane IMP & EXP CO., LTD manufcture Silicon Carbide Schottky Diode, Ultra Fast Recovery Diode, T

we produce 1200V Silicon Carbide Schottky Diode , the current is 2A/5A/8A/10A/15A/20A/50A, VRRM is 1200v , The

we produce 1200V Silicon Carbide Schottky Diode , the current is 2A/5A/8A/10A/15A/20A/50A, VRRM is 1200v , The

ChangZhou Duane IMP & EXP CO., LTD manufcture Silicon Carbide Schottky Diode, Ultra Fast Recovery Diode, T

ChangZhou Duane IMP & EXP CO., LTD manufcture Silicon Carbide Schottky Diode, Ultra Fast Recovery Diode, T

We have many different IGBT Module , IGBT2, IGBT2 Fast, IGBT3, IGBT3 Fast , SPT+ and FS-SA Trench, Current is

We have many different IGBT Module , IGBT2, IGBT2 Fast, IGBT3, IGBT3 Fast , SPT+ and FS-SA Trench, Current is

We have many different IGBT Module , IGBT2, IGBT2 Fast, IGBT3, IGBT3 Fast , SPT+ and FS-SA Trench, Current is

We have many different IGBT Module , IGBT2, IGBT2 Fast, IGBT3, IGBT3 Fast , SPT+ and FS-SA Trench , Current is

We sell 600V/1200V/1700V IGBT Module , the current is 75A/100A/150A/200A/300A/400A/600A, if you have interesti

We sell 75A/100A/150A/200A/300A/400A/600A IGBT Module , The Voltage is 600V/1200V/1700V.If you have interestin

We have many different IGBT Module , IGBT2, IGBT2 Fast, IGBT3, IGBT3 Fast , SPT+ and FS-SA Trench, Current is

75A/100A/150A/200A/300A/400A/600A is the current of Our IGBT Module , the VCES is 600V/1200V/1700V, If you hav

Our IGBT Module which has 600V/1200V/1700V , The Current is 75A/100A/150A/200A/300A/400A/600A, If you have int

We use very strong Bare Dice which from the U.S.A and europe to assemble Thyristor Module which is 80A/100A/11

We use Very strong Bare Dice to assembly Thyristor Module , the products are 80A/100A/110A/130A155A/165A, VRR

Our Thyristor Module Products are 80A/100A/110A/130A155A/165A, VRRM/VDRM is 1600V/1800V/2200V.Our Core is from

We produce Thyristor Module which is 80A/100A/110A/130A155A/165A, VRRM/VDRM is 1600V/1800V/2200V.Our Core is f

We produce Thyristor Module which is 80A/100A/110A/130A155A/165A, VRRM/VDRM is 1600V/1800V/2200V.Our Core is f

SCRs are mainly used in devices where the control of high power, possibly coupled with high voltage, is demand

We produce Thyristor Module which is 80A/100A/110A/130A155A/165A, VRRM/VDRM is 1600V/1800V/2200V.Our Core is f

Our Thyristor Module is 80A/100A/110A/130A155A/165A, VRRM/VDRM is 1600V/1800V/2200V.Our Core is from the U.S.A

We produce Thyristor Module which is 80A/100A/110A/130A155A/165A, VRRM/VDRM is 1600V/1800V/2200V.Our Core is f

we produce 2A/5A/8A/10A/15A/20A/30A/40A Silicon Carbide Schottky Diode Products , the VRRM is 1200V, package i

10A/1200V Silicon carbide schottky diode , the package is TO-220, we have 2A/5A/8A/10A/15A/20A/30A/40A/50A Sil

we produce 15A/1200V Silicon Carbide Schottky , the package is to-220, the other type is 2A/5A/10A/15A/20A/30A

We produce ITRMS=220A Thyristor/SCR Discrete , the VRRM is 1600V/1800V, A silicon-controlled rectifier (or sem

25A Thyristor Discrete , Package is TO-220, VRRM/VDRM is 1600V.The thyristor is a four-layer, three terminal s

The thyristor is a four-layer, three terminal semiconducting device, with each layer consisting of alternately

We produce Thyristor Discrete the ITRMS is from 25A to 260A , VRRM/VDRM is from 1600V to 2200V , Package is TO

Our mainly material(Chips /Dies)is from europen and the U.S.A , the Discrete is from (ITRMS)12A to 40A, (VRRM/

We sell Thyristor (SCR) Discrete and Module . Our mainly material(Chips /Dies)is from europen and the U.S.A