Description
The IGBT is a fairly recent invention. The first-generation devices
of the ***0s and early ***0s were relatively slow in switching, and
prone to failure through such modes as latchup (in which the device
won't turn off as long as current is flowing) and secondary
breakdown (in which a localized hotspot in the device goes into
thermal runaway and burns the device out at high currents).
Second-generation devices were much improved, and the current
third-generation ones are even better, with speed rivaling MOSFETs,
and excellent ruggedness and tolerance of overloads.[1]
(***0V IGBT Dual Module)
2MG*5B*2STD (*5A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
(**0V IGBT Dual Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
