Description
The IGBT combines the simple gate-drive characteristics of the
MOSFETs with the high-current and low–saturation-voltage capability
of bipolar transistors by combining an isolated gate FET for the
control input, and a bipolar power transistor as a switch, in a
single device. The IGBT is used in medium- to high-power
applications such as switched-mode power supplies, traction motor
control and induction heating. Large IGBT modules typically consist
of many devices in parallel and can have very high current handling
capabilities in the order of hundreds of amperes with blocking
voltages of ***0 V, equating to hundreds of kilowatts.
(***0V IGBT Dual Module)
2MG*5B*2STD (*5A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
2MG**0B*2STD (**0A/***0V IGBT Module)
(**0V IGBT Dual Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
2MG**0N*6TCH (**0A/**0V IGBT Module)
