Description

An SCR consists of four layers of alternating P and N type semiconductor materials. Silicon is used as the intrinsic semiconductor, to which the proper dopants are added. The junctions are either diffused or alloyed. The planar construction is used for low power SCRs (and all the junctions are diffused). The mesa type construction is used for high power SCRs. In this case, junction J2 is obtained by the diffusion method and then the outer two layers are alloyed to it, since the PNPN pellet is required to handle large currents. It is properly braced with tungsten or molybdenum plates to provide greater mechanical strength. One of these plates is hard soldered to a copper stud, which is threaded for attachment of heat sink. The doping of PNPN will depend on the application of SCR, since its characteristics are similar to those of the thyratron. Today, the term thyristor applies to the larger family of multilayer devices that exhibit bistable state-change behaviour, that is, switching either ON or OFF.
RexST
(Thyristor Discrete):
TYN**0C **0A ***0V TO*3
TYN**0C **0A ***0V TO***7
TYN**0C **0A ***0V TO***7
TYN*0C *0A ***0V/***0VTO***7
TYN*0H *0A ***0V TO***7
TYN*5C *5A ***0V/***0V TO***0
(Triac Discrete):
BTA*1 ***0V/***0V/***0V
BTA*1 ***0V
BTA*1 ***0V/***0V/**0V TOP3
BTA*6 ***0V/***0V TO***0