Boride sputtering target

Descripción del producto

Deposited by magnetron or other sputtering techniques, Indium Tin Oxide (ITO) target is used for the ITO coated substrates including electrodes for flat panel displays, touch panel contacts, energy saving automobile and building window glass, optoelectronic devices, solar panels, etc. 1.) Metal sputtering target: Silver, Ag, Osmium, Os, Platinum, Pt, Palladium, Pd, Iridium, Ir, Ruthenium, Ru, Rhenium, Re, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, Silicon, Si, Tellurium, Te, Bismuth, Bi, Tin, Sn, Zinc, Zn, Sulphur, S, Graphite, C, Boron, B, Lead, Pb, Antimony, Sb, Selenium, Se, Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti, Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium, Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu, Iron, Fe, Manganese, Mn, , Magnesium, Mg, Barium, Ba, Cadmium, Cd, Calcium, Ca, Strontium, Sr. 2.) Oxide sputtering target: La2O3, CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Nb2O5, Ga2O3, V2O5, ZrO2 doped with Ti, WO3, HfO2, MgO, Al2O3, Indium Tin Oxide, ITO (In2O*-SnO2), ZnO, Al2O3 doped ZnO (AZO), Ga2O3 doped ZnO (GZO), La0.*7Sr0.*3MnO3 (LSMO), ZrO*-Y2O3 stabilized (YSZ), ZrO2+Ti, ZrO2+SiO2, Bi2O3, Cr2O3, MoO, MoO3, NiO, SiO, Cr-SiO, SiO2, TiO, TiO2, TiO*-Nb2O5, Ti2O3, Ti3O5, CuO/Al2O3, Sb2O3, BaO, BaTiO3, CaO, Fe2O3, Fe3O4, PbO, PbTiO3, PbZrO3, LiNbO3, SrO, SrTiO3, SrZrO3, SrBaTiO3, PZT (Plumbum Zirconate Titanate), SrRuO3, LaNiO3, InGaZnO, CuInO2. 3.) (Boride, Carbide, Nitride, Fluoride, Silicide, Sulfide) sputtering target LaB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2 TiC, SiC, WC, WC-Co, B4C, TaC, ZrC, Cr3C2, HfC, Mo2C, VC LaN, CeN, PrN, NdN, SmN, EuN, GdN, TbN, DyN, HoN, ErN, TmN, YbN, LuN, ScN, YN, Si3N4, AlN, BN, BN/SiC mixture, HfN, TaN, NbN, ZrN, TiN, VN LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2, MgF2 CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, Nb5Si3