Diode laser Beauty equipment

Description

How to work?
 
The principle for lasers blood vessels treatment lies in selectivephotothermolysis theory. Painless high frequency can coagulate the hemoglobinby heat and close the amplified capillaries immediately. Treatment Tip diameteris only 0.011mm which will not damage the epidermis. The major targetedchromophore in facial vascular treatment is oxyhemoglobin that existing in redblood cell in vessels. Chromophore is the essential substance that absorbs laser energy. Appropriate pulse width and energy will be set in accordance with different thermal relaxation time. Then vessels will be damaged without hurting surrounding tissues.
According to the curve of laser absorption by targeted substance (right picture),oxyhemoglobin shows a much higher absorption interval in 980nm. Thus 980nmsemi-conductor laser has the ideal treatment effects for facial vascular removal.
After absorbing laser energy, oxyhemoglobin produces thermal energy and spreads to vascular endothelial cells through conduction mechanism. In consequence, blood vessel wall is damaged and facial vascular will be treated. The vascular can be removed once. Two working modes, Pulse and Continuous, guarantee more comfort and obvious results.
 

 
Advantages:
Quicktreatment with Obvious curative result;
Opticalfiber coupling output technique;
Non -invasive,no need of special care, without downtime.
Application:
1 Vascularlesions
2.Angiotelectasis
3.Proliferative lesion
4.Age spots and sun spots.
Treatment Handpiece

 
Handleholding way: taking the handle head to operate like holding a pen; pulses shallbe overlapped with appropriate moving speed; gradually moving towards the trendof dilated blood vessels.
Declaration: Parameter ranges are formulated based on large number of clinical practices. Itis suggested that the operator shall confirm the right treatment parameters inaccordance with actual clinical situation.
Technical specification:
l      Output Power: Max10W ;step value is 0.25W, 1-30
l      Laser Type: 980nm diode laser, Class IV;  
l      Instability: less than ±2ï¼…;
l      Beam divergence: ≤6.3mrad
l      Wavelength: 980nm±10nm, far IR
l      Laser output power: 0.25W~ 10W, step value is 0.25W, 1-30
l      Spot diameter: ï¼œ0.5mm;
l      Max.output laser power: max. 10W;
l      Aiming indicator light: < 5 mW，650nm red semiconductor laser;
l      Power supply: Code1: single-phase 230V ±23V, 50Hz±1Hz;
l                  Code2: single-phase 110V ±11V, 60Hz±1Hz;
l      Normal working conditions
Ambient Temperature: 5℃ ï½ž 40℃;
Relative Humidity: 30％～ 75ï¼…;
Atmospheric Pressure:  70kPa ï½ž 106kPa.
l      Transportation and storage requirements:
Ambient Temperature: -40℃ ï½ž 55℃(drain out cooling water)
Or  4℃～ 55℃(with cooling water);
Relative Humidity: ≤95ï¼…;
Atmospheric Pressure: 50kPa ï½ž 106kPa.
l          Dimension: 250mm×450mm×350mm;
l          Net weight: 2.5kg.