silicon wafer

Description

1. Czochralski silicon single crystal materials (CZ-Silicon)
Czochralski silicon single crystal materials produced by CETC*6 are mainly applied to manufacture of integrated circuit (IC), LED, MEMS, optical components and semiconductor devices. CETC*6 could supply **6 inches semiconductor grade silicon materials and *6 inches optics grade silicon materials including heavily doped silicon polished wafer, radiation resist silicon polished wafer, double side polished MEMS silicon wafer, optical grade silicon materials, etc.

 

Type	Specification
Total Thickness Variation (TTV)	≤5 µm
TIR	≤5 µm
WARP	≤*0 µm
BOW	≤*0 µm
Resistivity	(8×***4~*0) Ohm·cm
Particles	≤ *5/ wafer, ≥ 0.2µm
Back Side Surface	Polished / LTO / Etch
Other	SEMI Standard

2. Floating zone silicon single crystal materials (FZ-Silicon)
Floating zone silicon single crystal materials produced by CETC*6 are mainly applied to manufacture of electron devices such as silicon rectifier (SR), silicon controlled rectifier (SCR) and high-sensitive detector. CETC*6 has accumulated much experience on high resistivity and long lifetime FZ crystal growth, vacuum FZ crystal growth and microdefect control. CETC*6 could supply **6 inches FZ silicon single crystal and polished wafers.
 

Type	Specification
Total Thickness Variation (TTV)	≤5 µm
TIR	≤5 µm
WARP	≤*0 µm
BOW	≤*0 µm
Maximum Resistivity	≥**4 Ohm·cm
Oxygen Concentration	≤1×***6 atom/cm3
Carbon Concentration	≤1×***6 atom/cm3
Other	SEMI Standard