Gallium arsenide polycrystalline 5N-7N

Description

GaAs polycrystal parameters
Purity ?6N
Mobility?cm2/V•s? ***0 ~ ***0
Carrier concentration?cm*3? 1.0×***5 ~ 2.0×***6
Shape “D” shaped
Size ?mm? *0 (Width)**5(Height)***0(Length)

process can be high purity gallium (6 n and 7 n) and arsenic (6 n and 7 n) containing a small amount of impurity in complicated to crystal material spindle end (tail has been removed before provide to the user), so as to further improve the purity of polycrystalline materials, it is helpful to improve the follow-up into crystalline of gallium arsenide single crystal growth rate and quality.

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