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USA
Persona de contacto Mr. Peter
220 Cochrane Circle, Morgan Hill, California
| AccuSputter AW ***0 |
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AccuSputter AW ***0|Perkin Elmer ***0|Perkin Elmer ***0|Perkin Elmer ***0 Download All Products Brochure Download AccuSputter®AW ***0 Brochure The AccuSputter ® AW ****-Series Production Sputtering Systems are manufactured in the configuration of a manually-loaded system capable of fully automatic operation. The AccuSputter ® AW ***0 sputtering head is equipped with three DeltaTM cathode or four round *-inch positions ( Mo flame sprayed shields and shutters standard).The AccuSputter ® AW ****-Series Production Sputtering Systems deposit a wide variety of materials onto substrates such as ceramic, metal, plastics, glass and semiconductors. The system can also be used for RF sputter-etching, a process in which material is removed from, rather than being deposited on, the substrates prior to sputter deposition. These sputtering systems sequentially deposit thin films of up to three or four different materials onto a single substrate, thus attaining sandwich-structured films such as multi-layer optical interference filters or semiconductor devices. Resulting thin films range in thickness from a few Angstroms up to several microns. Description of Features:
Download AccuSputter®AW ***0 Brochure for more information on The AccuSputter ® AW ****-Series Production Sputtering Systems. Or contact us by e-mail for more information on The AccuSputter ® AW ****-Series Production Sputtering Systems. |
| Perkin Elmer ***0 Sputter |
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AccuSputter AW ***0|Perkin Elmer ***0|Perkin Elmer ***0|Perkin Elmer ***0 Download Brochure
Perkin-Elmer's Model ***0 delta cathode production sputtering
system is designed for high yield in production environments
demanding maximum throughput for metal deposition. It also provide
a high level of flexibility in process control for other
materials.
The ***0 uses a delta-shaped
cathode that eliminate the need for a large-area uniformity-shaping
aperture. This dramatically increases throughput while maintaining
high wafer-to-wafer uniformity.
Contrasted with circular
cathodes, target utilization is substantially higher. Up to *5% of
the target can be sputtered before target change, and some *0% of
the sputtered material actually reaches the substrate pallet. This
results in a lower cost per wafer and less frequent target changes.
Up to three delta or *-inch round targets may be installed for
sequential deposition of three different materials without breaking
vacuum.
The ***0 employs a fast cycle load lock, two-stage cryopump and full flood Meissner trap to maintain the process chamber at high vacuum and in a clean condition at all times. The process chamber is fabricated of stainless steel for contamination-free performance. A base pressure better than 5 X *0*7 Torr is achieved within 3.5 minutes from loading substrates into the load lock. Typical cycle time, with optional load lock heating and pumping, is *2 to *5 minutes for the deposition of 1 micron of aluminum.
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