Description

Type                          Multi crystalline silicon wafer ( B grade)
Size(mm)                                 **6.6 (*0.0 to *0.5)
P/N type                                          P
Do pant                                Boron
Resistivity(ohmcm)            0.5 – 5.0
Carbon Content         5.0x***7 atoms per cm3
Oxygen Content        3.0x***7 atoms per cm3
Life Time                           > 1.5 microsecond

T T V                                  less than or equal *0 microm

Thickness                 **0 microm(+/- *0 microm)
Production(Casting) method      EMC
Diffusion length           greater than or equal to *0 micrometer
Conner angle(degree)                *0.0 +/- 0.3
Beveled edge width                  0.5 - 2 mm
Appearance                Chip ( Width 0.8 mm, less than or equal 4 points)      
                                   Crack (None)