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Persona de contacto Ms. Eva
Room 407,Building 4,JingBeiXinCun,Road 6, Xixiang, Shenzhen, Guangdong
Tyoe of wafer Side length a(mm) Side length h(mm) Monocrystalline wafer **5.0±0.5 **0.0±1.0 **5.0±0.5 **5.0±1.0 **6.0±0.5 **0.0±1.0 Monocrystalline Wafer Technical Characteristic Ltem Parameter Requirements Parameter Requirements Parameter Requirements Diameter **5***5mm±0.5mm **5***5mm±0.5mm **6***6mm±0.5mm Orientation **0mm **5mm **0mm Orientierung <**0>±3° <**0>±3° <**0>±3° Resistivity 0.5—3.0Ω.com 0.5—3.0Ω.com 0.5—3.0Ω.com Minority carrier lifetime >2.0us >2.0us >2.0us Radial resistance change <*5﹪ <*5﹪ <*5﹪ Oxygen content ≤1.0****8at/cm3 ≤1.0****8at/cm3 ≤1.0****8at/cm3 Carbon content ≤5.0****6at/cm3 ≤5.0****6at/cm3 ≤5.0****6at/cm3 TTV ≤*5Î&frac*4;m ≤*5Î&frac*4;m ≤*5Î&frac*4;m Thickness **0±*0Î&frac*4;m **0±*0Î&frac*4;m **0±*0Î&frac*4;m Edge chip ≤2mm ≤2mm ≤2mm Saw mark *5Î&frac*4;m *5Î&frac*4;m *5Î&frac*4;m
