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Persona de contacto Mr. rothenstein
Lianxiu, Xiamen, Fujian
Monocrystalline silicon wafers **5X**5MM The Specification/ Wafers cut from silicon monocrystal solar Method of cultivation on Czochralski Dopand Boron Conductivity P Resistivity ***** 0, **3 Diameter mm **0± 0, 5 Orientation (**0) ± *0 Minority carrier lifenime msec > *0 Dislocation cm*2 <*0 Oxygen at/cm3 <1. ***8 at./cm3 Carbon at/cm3 <0.5. ***7 at./cm3 Length of ingot mm ******0 Diagonal mm **0±1 Dimension mm **5.0x**5.0 ±0.5 Symmetry W, X, Y, Z mm *0, 3 - *1, 9 Centre of squaring in all directions from centre mm <= 0, 3 Squareness and parallesism mm < 0, 5 Edge orientaion (**0), (**1) Thickness Î&frac*4;m **0 ± *0 Total thickness variation (TTV) Î&frac*4;m < *0 Bow Î&frac*4;m < *0 Wafer suface orientation (**0) ±*0 Surface saw damage depth Î&frac*4;m < *0
