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Sell RF Power Field-Effect Transistor[MRF372]

FOB Price

Obtener el precio más reciente

( Negotiable )

Minimum Order

Place of Origin:

ShenZhen Of China

Price for Minimum Order:

Minimum Order Quantity:

10 Piece

Packaging Detail:

Original Packing Box

Delivery Time:

1-2 Business Days

Supplying Ability:

1000 Piece per Day

Payment Type:

Other, Western Union, T/T

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Novelty Electronics Limited

China

Miembro Básico

Persona de contacto Mr. Allen

Sungang West Rd Rd, Shenzhen, Guangdong

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Description

The RF MOSFET Line

N–Channel Enhancement–Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies

from **0 to **0 MHz. The high gain and broadband performance of this

device make it ideal for large–signal, common source amplifier applications in

*2 volt transmitter equipment.

• Typical Narrowband Two–Tone *@********************

f2 = **3 MHz, *2 Volts

Output Power — **0 Watts PEP

Power Gain — *7 dB

Efficiency — *6%

IMD — –*5 dBc

• Typical Broadband Two–Tone Performance

Sell RF Power Field-Effect Transistor[MRF372]

Novelty Electronics Limited

Description

Send a direct inquiry to this supplier

A:

quiero saber:

Sell RF Power Field-Effect Transistor[MRF372]

Novelty Electronics Limited

Description

Send a direct inquiry to this supplier

A:

quiero saber:

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