Precio FOB
Obtener el precio más reciente750 ~ 750 USD / ( Negotiable )
|10 Piece Minimum Order
País:
China
N º de Modelo:
-
Precio FOB:
750 ~ 750 USD / ( Negotiable ) Obtener el precio más reciente
Lugar de origen:
-
Precio de pedido mínimo:
750
Cantidad de pedido mínimo:
10 Piece
Detalle de embalaje:
-
El tiempo de entrega:
-
Capacidad de suministro:
-
Tipo de pago:
T/T, Other
Grupo de productos :
-
Persona de contacto alex
Jinhua, Zhejiang
Crees CGHV****0F2 is a gallium nitride (GaN) High Electron Mobility
Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
Matched (IM) FET
offers excellent power added efficiency in comparison to other
technologies. GaN
has superior properties compared to silicon or gallium arsenide,
including higher
breakdown voltage, higher saturated electron drift velocity and
higher thermal
conductivity. GaN HEMTs also offer greater power density and wider
bandwidths
compared to GaAs transistors. This IM FET is available in a
metal/ceramic flanged
package for optimal electrical and thermal performance.
| Parameter | 8.4 GHz | 8.8GHz | 9.0GHz | 9.2GHz | 9.4GHz | 9.6GHz | units |
| linear power | *2.7 | *2.4 | *2.7 | *3.1 | *3.1 | *2.4 | dB |
| output power | **1 | **7 | **0 | **2 | **0 | **1 | W |
| power gain | *0.8 | *0.6 | *0.7 | *0.7 | *0.5 | *0.2 | dB |
| power added efficiency | *4 | *2 | *4 | *3 | *5 | *5 | % |
| Features | Application |
| 8.**9.6 GHz Operation | Marine Radar |
| **5WPOUT typical | Weather Monitoring |
| *0dB Power Gain | Air Traffic Control |
| *5% Typical PAE | Maritime Vessel Traffic Control |
| *0 Ohm Internally Matched | Port Security |
| <0.3 dB Power Droop |
| País: | China |
| N º de Modelo: | - |
| Precio FOB: | 750 ~ 750 / ( Negotiable ) Obtener el precio más reciente |
| Lugar de origen: | - |
| Precio de pedido mínimo: | 750 |
| Cantidad de pedido mínimo: | 10 Piece |
| Detalle de embalaje: | - |
| El tiempo de entrega: | - |
| Capacidad de suministro: | - |
| Tipo de pago: | T/T, Other |
| Grupo de productos : | - |
