Descripción del producto

We Supply prime grade sapphire wafer, used as GaN Substrate epitxial growth, Class **0 clean room cleaning and vacuum packing derived nitrogen, OEM service is availaber. Monthly output **0,**0 pieces, sigle side polished and double sides polished available, various size in stocking.

Specifications:

Growth method: ...............................................................................................................CZ
Crystal structure: ..............................................................................................Hexagonal 
Orientation: ...........C-plane off to M-Plane 0.2 degree , A-plane , R-plane , M-plane 
Dielectric constant: ....................................................................................................*1.*8
Lattice constant: .......................................................................................................4.*7 A 
Tolerance of orientation: .................................................................................+/- 0.5 deg 
Size: .....................................................2" , 3" , 4" ,Other sizes available upon request 
Thickness: ...**0 um(2"), **0 um(2", 3"), 0.5 mm(3", 4"), 0.*5mm(4"), 0.8mm(4") 
Surface finish: .......................................................one side or two sides epi polished 
Surface roughness: ..........................................................................................Ra <= 2 A 
Package: .........Single wafer container or Ampak cassette, **0 grade clean room

Ordering information: Diameter, Thickness,Orientation, Polish(1 side or 2 sides).