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RF Power Field-Effect Transistor

Precio FOB

Obtener el precio más reciente

( Negotiable )

1 Piece Minimum Order

País:

China

N º de Modelo:

MRF151G

Precio FOB:

( Negotiable )(Negociable) Obtener el precio más reciente

Lugar de origen:

ShenZhen Of China

Precio de pedido mínimo:

Cantidad de pedido mínimo:

1 Piece

Detalle de embalaje:

El tiempo de entrega:

1-2 Business Days

Capacidad de suministro:

1000 Piece per Day

Tipo de pago:

Western Union, T/T

Grupo de productos :

Contactar ahora

Novelty Electronics Limited

China

Miembro Básico

Persona de contacto Mr. Allen

Sungang West Rd Rd, Shenzhen, Guangdong

Contactar ahora

Descripción del producto

The RF MOSFET Line

N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies to **5 MHz.The high power, high gain and broadband performance of this device makes possible solid state transmitters

The high power, high gain and broadband performance of this

device makes possible solid state transmitters for FM broadcast or TV channel

frequency bands.

• Guaranteed Performance at **5 MHz, *0 V:

Output Power — **0 W

Gain — *4 dB (*6 dB Typ)

Efficiency — *0%

• Low Thermal Resistance — 0.*5°C/W

• Ruggedness Tested at Rated Output Power

• Nitride Passivated Die for Enhanced Reliability

País:	China
N º de Modelo:	MRF151G
Precio FOB:	( Negotiable ) (Negociable) Obtener el precio más reciente
Lugar de origen:	ShenZhen Of China
Precio de pedido mínimo:	-
Cantidad de pedido mínimo:	1 Piece
Detalle de embalaje:	-
El tiempo de entrega:	1-2 Business Days
Capacidad de suministro:	1000 Piece per Day
Tipo de pago:	Western Union, T/T
Grupo de productos :	-