Descripción del producto

Type Multi crystalline silicon wafer ( B grade) Size(mm) **6.6 (*0.0 to *0.5) P/N type P Do pant Boron Resistivity(ohmcm) 0.5 – 5.0 Carbon Content 5.0x***7 atoms per cm3 Oxygen Content 3.0x***7 atoms per cm3 Life Time > 1.5 microsecond T T V less than or equal *0 microm Thickness **0 microm(+/- *0 microm) Production(Casting) method EMC Diffusion length greater than or equal to *0 micrometer Conner angle(degree) *0.0 +/- 0.3 Beveled edge width 0.5 - 2 mm Appearance Chip ( Width 0.8 mm, less than or equal 4 points) Crack (None)