Descripción del producto

N Channel Enhancement-Mode Mosfet. The GT***0 uses advanced trench technology to provide excellent Rds , and ultra-low low gate charge with a 2.5V gate rating. This device is suitable for use as a load switch or in PWM applications. • RoHS Compliant • GT***0 is Halogen Free Vds=*0V, Vgs=±*2 Rds(on), *****, *****<*8mΩ Rds(on), *****, *****<*8mΩ Qty: 3Kpcs/tray; SOT**3 package