Descripción del producto

1. Physical character: 

Atomic Weight: **4.**8

Density: ρ=7.*1 g/cm3 (****0°C)

Melting Point: mp: **6.*1 °C 

Boiling Point: bp: ***0 °C 



2. Specification: 

High Purity Indium: 

In**5 Grade *9.**9. The content of Indium is above *9.**9%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, Sn, Tl, & Zn is bellow *0 ppm; 

Uitra Purity Indium:

In**6 Grade *9.***9. The content of Indium is above *9.***9%. The total content of Cd, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm; 

Uitra High Purity Indium:

In**7 Grade *9.****9. The content of Indium is above *9.**9%. The total content of Ag, Cd, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm; 



3. Physical Size: 

Virgulate, Ingot, Granule.



4. Usage: 

It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.



5. Packing: 

It is packed with dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule.