Descripción del producto

Cadmium Telluride (CdTe)
1,Purity : 5N(*9.**9%);
2,Process :THM for CSS,VTD process to produce CdTe thin-film ;
3,Analysis :ICP-MS or GDMS (All impurity elements is below *0ppm;）;LPSA;XRD;
4,Particle Size :Powder:***0mesh/**0Mesh;Granule:**6mm;(or customize),Tabelt;
5,Service :Supply MSDS; Free sample; Solutions for material application;
6,Packing :Vacuum packing or Argon shield;
7,Application: CdTe thin-film solar cells ;CZT; HgxCd*-xTe;
8,Payment term : T/T *0days after customer approval;
9,Physical character:
Molecular mass: **0.*1
Band gap: 1.*4 eV
Refractive index: 2.*7
Density: ρ=5.*5 g·cm−3
Melting Point: ***2℃ 
Boiling Point: ***0℃;
*0, Specification:
Cadmium telluride:
CdTe**5 Grade *9.**9. The content ofCadmium Tellurideis above *9.**9%. The total content ofAg, Al, As, Bi, Cu, Fe, Mg, Ni, Pb, Se, Si & Zn is bellow *0 ppm; 
CdTe*06 Grade *9.*999. The content ofCadmium Tellurideis above *9.*999%. The total content ofAg, Al, As, Bi, Cu, Fe, Mg, Ni, Pb, Se, Si & Zn is bellow 1ppm; 
3, Physical Size:
Lump,Powder.
4, Usage:
It is mainly used in the manufacture of solar cells, infrared modulators, HgxCd*-xTe underlay, infrared electroluminescence electric eye, infrared detectors, X-ray detectors, nuclear radio activity detectors, approach visible light radiation etc.