Descripción del producto

Indium (In)
1, Physical character:
Atomic Weight: **4.**8
Electronegative: 1.*8
Density: ρ=7.*1 g'cm_3 (****0'C)
Melting Point: **6.***5 'C
Boiling Point: ***2 'C
2, Specification:
High Purity Indium:
In**5 Grade *9.**9. The content of Indium is above *9.**9%. The total content of AG, Al, As, CD, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow *0 ppm;
Uitra Purity Indium:
In**6 Grade *9.***9. The content of Indium is above *9.***9%. The total content of CD, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm;
Uitra High Purity Indium:
In**7 Grade *9.****9. The content of Indium is above *9.****9%. The total content of AG, CD, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm;
3, Physical Size:
Virgulate, Ingot, Granule.
4, Usage:
It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.
5, Packing:
It is packed with dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule.